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IRFS520A - Advanced Power MOSFET

Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max. ) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ. ) Ο IRFS520A BVDSS = 100 V RDS(on) = 0.2 Ω ID = 7.2 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Cont.

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ.) Ο IRFS520A BVDSS = 100 V RDS(on) = 0.2 Ω ID = 7.2 A TO-220F 1 2 3 1.Gate 2. Drain 3.
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