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Fairchild Semiconductor Electronic Components Datasheet

BC239 Datasheet

NPN EPITAXIAL SILICON TRANSISTOR

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BC237/238/239
NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
LOW NOISE: BC239
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Characteristic
Symbol
Rating
Collector-Emitter Voltage
: BC237
: BC238/239
Collector-Emitter Voltage
: BC237
: BC238/239
Emitter-Base Voltage
: BC237
: BC238/239
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
VCES
VCEO
VEBO
IC
PC
TJ
TSTG
50
30
45
25
6
5
100
500
150
-55 ~ 150
Unit
V
V
V
V
V
V
mA
mW
°C
°C
TO-92
1. Collector 2. Base 3. Emitter
ELECTRICAL CHARACTERISTICS (TA=25°C)
Characteristic
Symbol
Test Conditions
Collector-Emitter Breakdown Voltage
:BC237
: BC238/239
Emitter Base Breakdown Voltage
: BC237
: BC238/239
Collector Cut-off Current
: BC237
: BC238/239
DC Current Gain
Collector-Emitter Saturation Voltage
BVCEO
BVEBO
ICES
hFE
VCE (sat)
Collector Base Saturation Voltage
VBE (sat)
Base Emitter On Voltage
Current Gain Bandwidth Product
VBE (on)
fT
Collector Base Capacitance
Emitter Base Capacitance
Noise Figure
: BC237/238
: BC239
: BC239
CCBO
CEBO
NF
NF
IC=2mA, IB=0
IE=1µA, IC=0
VCE=50V, IB=0
VCE=30V, IB=0
VCE=5V, IC=2mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=3V, IC=0.5mA
VCE=5V, IC=10mA
VCB=10V, f=1MHz
VEB=0.5V, f=1MHz
VCE=5V, IC=0.2mA,
f=1KHz RG=2kohm
VCE=5V, IC=0.2mA
RG=2kohm, f=30~15KHz
Min Typ Max Unit
45 V
25 V
6V
5V
0.2 15 nA
0.2 15 nA
120 800
0.07 0.2 V
0.2 0.6 V
0.73 0.83
V
0.87 1.05
V
0.55 0.62
85
0.7 V
MHz
150 250
MHz
3.5 6 pF
8 pF
2 10 dB
4 dB
4 dB
hFE CLASSIFICATION
Classification
A
hFE 120-220
B
180-460
C
380-800
Rev. B
©1999 Fairchild Semiconductor Corporation


Fairchild Semiconductor Electronic Components Datasheet

BC239 Datasheet

NPN EPITAXIAL SILICON TRANSISTOR

No Preview Available !

BC237/238/239
NPN EPITAXIAL SILICON TRANSISTOR


Part Number BC239
Description NPN EPITAXIAL SILICON TRANSISTOR
Maker Fairchild
Total Page 3 Pages
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BC239 Datasheet PDF

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