BC182L Datasheet | Fairchild Semiconductor

NPN General Purpose Amplifier - This device is designed for general purpose amplifier application at collector currents to 100m A. - Sourced from process 10. TO-92 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Storage Junction Temperature Range Value 50 60 6 100 - 55 ~ 150 Units V V V m A °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition IC = 2m A, IB = 0 IC = 10µA, IE = 0 IE = 100µA, IC = 0 VCB = 50V, VBE = 0 VEB = 4V, IE = 0 VCE = 5V, IC = 10µA VCE = 5V, IC = 2m A VCE = 5V, IC = 100m A IC = 10m A, IB = 0.5m A IC = 100m A, IB = 5m A IC = 100m A, IB = 5m A VCE = 5V, IC = 2m A VCE = 5V, IC = 10m A, f = 100MHz VCE = 10V, IC = 0, f = 1MHz VCE = 5V, IC = 2m A, f = 1KHz VCE = 5V, IC = 0.2m A RS = 2KΩ, f = 1KHz, BW = 200Hz 240 0.55 150 5 500 10 d B 40 120 80 Min. 50 60 6 15 15 Typ. Max. Units V V V n A n A Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)CBO V(BR)EBO ICBO IEBO Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter-Base Leakage Current On Characteristics h FE DC Current Gain 500 0.25 0.6 1.2 0.7 V V V MHz p F VCE(sat) VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Dynamic Characteristics f T Current Gain Bandwidth Product Cob hfe NF Output Capacitance Small Signal Current Gain Noise Figure Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJA RθJC Parameter Total Device Dissipation @TA=25°C Derate above 25°C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Max. 350 2.8 357 125 Units m W m W/°C m W/°C °C/W ©2002 Fairchild Semiconductor Corporation Rev. A, October 2002 Package Dimensions TO-92 - 0.15 +0.25 14.47 ±0.40 ±0.10 4.58...