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3DG2230A - (3DG2230/A) SILICON NPN TRANSISTOR

This page provides the datasheet information for the 3DG2230A, a member of the 3DG2230 (3DG2230/A) SILICON NPN TRANSISTOR family.

Features

  • High voltage, high DC current gain. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC IB PC Tj Tstg 2SC2230 2SC2230A 200 160 180 V V V mA mA mW ℃ ℃ 5.0 100 50 800 150 -55～150 /Electrical characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob VCB=200V VEB=5.0V VCE=10V VCE=10V IC=50mA VCE=10V VCE=10V VCB=10V IE=0 IE=0 IC=0 IC=10mA IC=50mA IB=5.0mA IC=1.0mA IC=10mA f=1.0MHz Y:120～240 GR:200～400 0.

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Datasheet Details

Part number 3DG2230A
Manufacturer FOSHAN BLUE ROCKET
File Size 218.57 KB
Description (3DG2230/A) SILICON NPN TRANSISTOR
Datasheet download datasheet 3DG2230A Datasheet
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Full PDF Text Transcription

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2SC2230(3DG2230) 2SC2230A(3DG2230A) NPN /SILICON NPN TRANSISTOR :,/Purpose: High voltage general amplifier, color TV class B sound output applications. :VCEO ,/Features: High voltage, high DC current gain. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC IB PC Tj Tstg 2SC2230 2SC2230A 200 160 180 V V V mA mA mW ℃ ℃ 5.0 100 50 800 150 -55～150 /Electrical characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob VCB=200V VEB=5.0V VCE=10V VCE=10V IC=50mA VCE=10V VCE=10V VCB=10V IE=0 IE=0 IC=0 IC=10mA IC=50mA IB=5.0mA IC=1.0mA IC=10mA f=1.0MHz Y:120～240 GR:200～400 0.5 50 0.6 120 80 0.1 0.1 400 0.5 0.7 7.
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