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3DA2396 - SILICON NPN TRANSISTOR

Key Features

  • High DC current gain),low VCE(sat),large collector power dissipation,wide SOA. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 80 V VCEO 60 V VEBO 6.0 V IC 3.0 A ICP 6.0 A PC(Ta=25℃) 2.0 W PC(Tc=25℃) 30 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Test condition IC=50μA IC=1.0mA IE=50μA VCB=80V IE=0 VEB=6.0V IC=0 VCE=4.0V IC=500mA IC=2.0A IB=0.05A IC=2.0A IB=0.05A VCE=5.

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Datasheet Details

Part number 3DA2396
Manufacturer FOSHAN BLUE ROCKET
File Size 363.11 KB
Description SILICON NPN TRANSISTOR
Datasheet download datasheet 3DA2396 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SD2396(3DA2396) NPN /SILICON NPN TRANSISTOR : 。 Purpose: Low frequency power amplifier. :,,,,。 Features: High DC current gain),low VCE(sat),large collector power dissipation,wide SOA. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 80 V VCEO 60 V VEBO 6.0 V IC 3.0 A ICP 6.0 A PC(Ta=25℃) 2.0 W PC(Tc=25℃) 30 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Test condition IC=50μA IC=1.0mA IE=50μA VCB=80V IE=0 VEB=6.0V IC=0 VCE=4.0V IC=500mA IC=2.0A IB=0.05A IC=2.0A IB=0.05A VCE=5.0V IC=0.2A f=10MHz VCB=10V IE=0 f=1.0MHz Min 80 60 6.0 400 Rating Typ 1000 0.3 40 55 Max 100 100 2000 0.8 1.