* VDS =20V,ID =9A RDS(ON) < 14mΩ @ VGS=4.5V RDS(ON) < 18mΩ @ VGS=2.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage a.

General Features
* VDS =20V,ID =9A RDS(ON) < 14mΩ @ VGS=4.5V RDS(ON) < 18mΩ @ VGS=2.5V
* High density cell des.

TheFNK9928 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =20V,ID =9A RDS(ON) < 14mΩ @ VGS=4.5V RDS(ON) < 18mΩ @ VGS=2.5V

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