* VDS = 68V,ID =80A RDS(ON) < 7.0mΩ @ VGS=10V (Typ:5.9mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdso.

FNK6808A General Features
* VDS = 68V,ID =80A RDS(ON) < 7.0mΩ @ VGS=10V (Typ:5.9mΩ)
* Special process techn.

The FNK6808A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK6808A General Features
* VDS = 68V,ID =80A RDS(ON) < 7.0mΩ @ VGS=10V (Typ:5.9mΩ) <.

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