FNK6075 mosfet equivalent, n-channel power mosfet.
* VDS =60V,ID =75A RDS(ON) < 9.4m Ω @ VGS=10V
(Typ:7.5? mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and curre.
FNK6075
General Features
* VDS =60V,ID =75A RDS(ON) < 9.4m Ω @ VGS=10V
(Typ:7.5? mΩ)
* High density cell de.
The FNK6075 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FNK6075
General Features
* VDS =60V,ID =75A RDS(ON) < 9.4m Ω @ VGS=10V
(Typ:7.5? mΩ)
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