FNK6075 - N-Channel Power MOSFET

FNK

General Description

The FNK6075 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =60V,ID =75A RDS(ON) < 9.4m Ω @ VGS=10V (Typ:7.5? mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

📥 Download Datasheet

FNK6075 n-channel power mosfet by FNK - Datasheet Preview

Datasheet Details

Part number	FNK6075
Manufacturer	FNK
File Size	1.57 MB
Description	N-Channel Power MOSFET
Datasheet	FNK6075 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer

Other Datasheets by FNK

Part Number	Description
FNK6075K	N-Channel Power MOSFET
FNK6003	N-Channel Power MOSFET
FNK6050	N-Channel Power MOSFET
FNK6050C	N-Channel Power MOSFET
FNK6050K	N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6075 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK6075 General Features ● VDS =60V,ID =75A RDS(ON) < 9.4m Ω @ VGS=10V (Typ:7.