FNK4420 mosfet equivalent, n-channel power mosfet.
* VDS= 30V, ID =14A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) <12mΩ @ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage a.
General Features
* VDS= 30V, ID =14A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) <12mΩ @ VGS=4.5V
* High density cell desi.
The FNK4420 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS= 30V, ID =14A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) <12mΩ @ VGS=4.5V
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