FNK4420 N-Channel Power MOSFET
● VDS= 30V, ID =14A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) <12mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage a.
General Features
● VDS= 30V, ID =14A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) <12mΩ @ VGS=4.5V
● High density cell desi.
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