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FNK30H80A - N-Channel Power MOSFET

General Description

The FNK30H80A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =30V,ID =80A RDS(ON).

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Datasheet Details

Part number FNK30H80A
Manufacturer FNK
File Size 1.47 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK30H80A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FNK30H80A FNK N-Channel Enhancement Mode Power MOSFET Description The FNK30H80A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =80A RDS(ON) <6.6mΩ @ VGS=10V RDS(ON) < 8.