FNK1404T mosfet equivalent, n-channel power mosfet.
* VDS =45V ,ID =205A
Rds(on) <4mΩ @ Vgs=10V (Typ:2.8mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
General Features
* VDS =45V ,ID =205A
Rds(on) <4mΩ @ Vgs=10V (Typ:2.8mΩ)
* High density cell design for ultra .
The FNK1404T uses advanced trench technology and design to provide excellent Rds(on) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =45V ,ID =205A
Rds(on) <4mΩ @ Vgs=10V (Typ:2.8mΩ)
* High dens.
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