* VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ)
* Super high dense cell design
* Advanced trench process technology
* Reliable and rugged

It is ESD protested. General Features
* VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ)
* Super hig.

The FNK10P85K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features
* VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V .

FNK10P170K

FNK10P18K

FNK10N01

FNK10N01-A

FNK10N02

FNK10N02-A

FNK10N02C

FNK10N03

FNK10N25A

FNK10N25B

FNK10N25E

FNK10N25S

FNK10N25SC

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