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C5147 Datasheet Preview

C5147 Datasheet

NPN silicon Transistor

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■■APPLICATIONFREQUENCY AMPLIFIER APPLICATION,
C5147
—NPN silicon —
■■MAXIMUM RATINGSTa25℃)
PARAMETER
SYMBOLRATING UNIT
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power Dissipation (Ta=25)
Collector Power Dissipation (Tc=25)
Junction Temperature
Storage Temperature Range
VCBO
300 V
VCEO
300 V
VEBO
5V
IC 100 mA
PC 2 W
PC 10 W
TJ 150
Tstg 55~150
1 TO-220
1.Base 2.Collector 3.Emitter
■■ ELECTRICAL CHARACTERISTICS Ta=25℃)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITION
DC Current Gain
hFE 60 200 VCE=10 VIc=10 mA
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Gain bandwidth product
Common Base Output Capacitance
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(sat)
fT
Cob
0.5 µA VCB= 200VIE=0
0.5 µA VEB= 4VIc=0
300 V Ic= 0.05mAIE=0
300 V Ic=0.1 mAIB=0
5 V IE=0.05 mAIc=0
0.2 1 V Ic=50 mAIB= 5mA
50 100
MHz VCE= 30VIE=-20 mAf=30MHz
3 PF VCB= 30V, IE=0, f = 1MHz
■■hFE Classification And Marking
Print Mark
C5147
Classification
D
hFE 100-150
E
150-200


Part Number C5147
Description NPN silicon Transistor
Maker FGX
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C5147 Datasheet PDF






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