A844 Datasheet | FGX

- ç¹âÐÀ¼¼Êõ×ÊÁÏ - - APPLICATION：General Purpose Amplifier Applications.. - PNP silicon - - - MAXIMUM RATINGS（Ta＝25℃） PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VCBO VCEO VEBO IC PC TJ Tstg -55 -55 -5 -100 300 150 V V V m A m W ℃ ﹣55~150 ℃ - - ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETER DC Current Gain Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage SYMBOL h FE ICBO IEBO BVCBO -55 -55 -5 -0.66 -0.1 200 2 -0.75 -0.5 MIN. 160 TYP. MAX. UNIT 500 -0.1 -0.05 µA µA V V V V V TEST CONDITION VCE= -12V，Ic= -2m A VCB= -18V，IE=0 VEB= -2V，Ic=0 Ic= -0.1m A，IE=0 Ic= -1m A，IB=0 IE= -0.1m A，Ic=0 VCE= -12V，Ic= -2m A Ic= -10m A，IB= -1m A Collector-Emitter Breakdown Voltage BVCEO Emitter-Base Breakdown Voltage Base-Emitter Voltage Collector-Emitter Saturation Voltage Gain bandwidth product mon Base Output Capacitance BVEBO VBE VCE(sat) f T Cob MHz Ic= -2m A，VCE= -12V PF VCB= -10V, IE=0, f = 1MHz - - h FE Classification Classification h FE C 160~320 D...