Datasheet4U Logo Datasheet4U.com

FMBBAS16 - 200mW EPITAXIAL PLANAR DIODES

Description

Pin 3 Pin 1 NC Pin 2 .043 .004 .016 www.DataSheet4U.com

Features

  • n PLANAR.

📥 Download Datasheet

Datasheet Details

Part number FMBBAS16
Manufacturer FCI
File Size 86.37 KB
Description 200mW EPITAXIAL PLANAR DIODES
Datasheet download datasheet FMBBAS16 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FMB-22H Schottky Barrier Diodes 20V Sanken electric
FMB-22L Schottky Barrier Diodes 20V Sanken electric
FMB-2306 Schottky Diode Sanken electric
FMB-24 Silicon Schottky Barrier Diode Sanken electric
FMB-24H Silicon Schottky Barrier Diode Sanken electric

Other Datasheets by FCI

Part Number Description
FMBBAS19 (FMBBAS19 - FMBBAS21) 200mW EPITAXIAL PLANAR DIODES
FMBBAS20 (FMBBAS19 - FMBBAS21) 200mW EPITAXIAL PLANAR DIODES
FMBBAS21 (FMBBAS19 - FMBBAS21) 200mW EPITAXIAL PLANAR DIODES
FMBBAV70 200mW EPITAXIAL PLANAR DIODES
FMBBAV99 200mW EPITAXIAL PLANAR DIODES

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Data Sheet 200 mW EPITAXIAL PLANAR DIODES Mechanical Dimensions .110 .060 .037 .115 .037 2 3 1 .016 FMBBAS16 Description Pin 3 Pin 1 NC Pin 2 .043 .004 .016 www.DataSheet4U.com Features n PLANAR PROCESS n 200 mW POWER DISSIPATION n INDUSTRY STANDARD SOT-23 PACKAGE n MEETS UL SPECIFICATION 94V-0 FMBBAS16 FMBBAS16 85 75 Units Volts Volts Electrical Characteristics @ 25 O C. Maximum Ratings Peak Reverse Voltage...VRM RMS Reverse Voltage...VR(rms) Average Forward Rectified Current...IO Non-Repetitive Peak Forward Surge Current...IFSM Forward Voltage...VF @ IF = 150 mA DC Reverse Current...IR Power Dissipation...PD Frequency...F Typical Junction Capacitance...CJ Reverse Recovery Time...tRR Operating Temperature Range...TJ Storage Temperature Range...TSTRG .
Published: |