FSP8N60 mosfet equivalent, 600v n-channel mosfet.
* 7.5A,600v,RDS(on)=1.0Ω@VGS=10V
* Gate charge (Typical 30nC)
* High ruggedness
* Fast switching
* 100% AvalancheTested
* Improved dv/dt capabilit.
This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited f.
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