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Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
20V
RDSON (MAX.)
20mΩ
ID
8A
Pb‐Free Lead Plating & Halogen Free ESD Protection
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
VGS ID IDM PD Tj, Tstg
EMZF20R02W
LIMITS ±12 8 6.5 40 2.1 1.3
‐55 to 150
UNIT V
A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction‐to‐Ambient3 (t≦10s) Junction‐to‐Ambient3
SYMBOL RJA RJA
TYPICAL
1Pulse width limited by maximum junction temperature.
EMZF20R02W Datasheet
