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EMBA2A06HS - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

The EMBA2A06HS by Excelliance MOS is a Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor. Below is the official datasheet preview.

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Official preview page of the EMBA2A06HS Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor datasheet (Excelliance MOS).

Datasheet Details

Part number EMBA2A06HS
Manufacturer Excelliance MOS
File Size 370.08 KB
Description Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMBA2A06HS-ExcellianceMOS.pdf
Additional preview pages of the EMBA2A06HS datasheet.

EMBA2A06HS Product details

Description

N-CH BVDSS 60V RDSON (MAX.)@VGS=10V 120mΩ RDSON (MAX.)@VGS=4.5V 180mΩ ID @TC=25℃ 11A Dual N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current TC = 25 °C TC = 100 °C ID 11 7.3 Pulsed Drain Current1 IDM 44 Avalanche Current IAS 5 Avalanche Energy L = 0.1mH EAS 1.25 Repetitive Avalanche Ener

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