EMBA2A06HS transistor equivalent, dual n-channel logic level enhancement mode field effect transistor.
N-CH
BVDSS
60V
RDSON (MAX.)@VGS=10V 120mΩ RDSON (MAX.)@VGS=4.5V 180mΩ
ID @TC=25℃
11A
Dual N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free
▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST.
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