EMBA2A06HS - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

General Description

N-CH BVDSS 60V RDSON (MAX.)@VGS=10V 120mΩ RDSON (MAX.)@VGS=4.5V 180mΩ ID @TC=25℃ 11A Dual N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Volta

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EMBA2A06HS dual n-channel logic level enhancement mode field effect transistor by Excelliance MOS - Datasheet Preview

Datasheet Details

Part number	EMBA2A06HS
Manufacturer	Excelliance MOS
File Size	370.08 KB
Description	Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMBA2A06HS Datasheet

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EMBA2A06HS Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 60V RDSON (MAX.)@VGS=10V 120mΩ RDSON (MAX.)@VGS=4.5V 180mΩ ID @TC=25℃ 11A Dual N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current TC = 25 °C TC = 100 °C ID 11 7.3 Pulsed Drain Current1 IDM 44 Avalanche Current IAS 5 Avalanche Energy L = 0.1mH EAS 1.25 Repetitive Avalanche Energy2 L = 0.05mH EAR 0.