| Description | N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS RDSON (MAX.) 60V ‐60V 60mΩ 90mΩ ID 5A ‐4A Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = ... |
| Features |
...
|
| Datasheet |
 EMB60C06G Datasheet - 213.82KB |
