EMB18A04VB transistor equivalent, dual n-channel logic level enhancement mode field effect transistor.
Q1
Q2
BVDSS
40V
40V
RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V
18mΩ 25mΩ
18mΩ 25mΩ
ID @TC=25℃ ID @TA=25℃
28A
28A
10A
10A
Dual N Channel MOSFET
UIS, Rg 100% Tested
Pb-Free Lead Plating & Halogen Free
▪ABSOLUTE MAXIMUM RATINGS (TC = 2.
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