EMB17A03V - Dual N-Channel MOSFET

Excelliance MOS

Datasheet Details

Part number	EMB17A03V
Manufacturer	Excelliance MOS
File Size	180.96 KB
Description	Dual N-Channel MOSFET
Datasheet	EMB17A03V Datasheet

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Other Datasheets by Excelliance MOS

Part Number	Description
EMB17A03G	Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMB17A03H	MOSFET
EMB17C03G	N & P-Channel Logic Level Enhancement Mode Field Effect Transistor
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Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 17mΩ ID 10A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMB17A03V LIMITS UNIT Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C ID IDM 10 7 40 Avalanche Current IAS 12 Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=10A, RG=25Ω L = 0.05mH EAS EAR 5 2.5 Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 2.27 0.9 ‐55 to 150 100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=7.