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EMB12N04G Datasheet - Excelliance MOS

EMB12N04G N-Channel Logic Level Enhancement Mode Field Effect Transistor

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 12mΩ ID 12A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg EMB12N04G LIMITS ±20 12 10 4.

EMB12N04G Datasheet (176.69 KB)

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Datasheet Details

Part number:

EMB12N04G

Manufacturer:

Excelliance MOS

File Size:

176.69 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMB12N04G N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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