EMB04N03H Datasheet - Excelliance MOS

EMB04N03H-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMB04N03H

Manufacturer:

Excelliance MOS

File Size:

224.19 KB

Description:

Mosfet.

EMB04N03H, MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free EMB04N03H ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=53A, RG=25Ω Repetitive Avalanche Energy2 L = 0.

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EMB04N03H MOSFET Excelliance MOS

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