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XR46000 - N-Channel Power MOSFET

Description

The XR46000 is a silicon N-channel enhanced power MOSFET.

With low conduction loss, good switching performance and high avalanche energy, it is suitable for various power supply system, especially for AC step driving application for LED lighting.

Features

  • Fast switching.
  • ESD improved capability.
  • Low gate charge (Typ. 7.5nC).
  • Low reverse transfer capacitance (Typ. 5.0pF).

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Full PDF Text Transcription

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XR46000 N-Channel Power MOSFET Description The XR46000 is a silicon N-channel enhanced power MOSFET. With low conduction loss, good switching performance and high avalanche energy, it is suitable for various power supply system, especially for AC step driving application for LED lighting. The package type is SOT-223, which comply with the RoHS standard. Key Parameters VDSS ID PD (TC = 25°C) RDS,ON,typ 600V 1.5A 20W 7.0Ω FEATURES ■■ Fast switching ■■ ESD improved capability ■■ Low gate charge (Typ. 7.5nC) ■■ Low reverse transfer capacitance (Typ. 5.0pF) APPLICATIONS ■■ LED lighting applications Downlight High bay Specialty Architectural Equivalent Circuit Drain Pin Configuration Drain Gate Source Figure 1.
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