XR-2012 arrays equivalent, high-current darlington transistor arrays.
Peak Inrush Current Capability of 750 mA Internal Protection Diodes for Driving Inductive Loads Excellent Noise Immunity Direct Compatibility with Most Logic Families Opp.
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The XR-2011/2012/2013/2014 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic substrate. All units feature open collector outputs and integral protection diodes for drivi.
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