4N27
Description
The 4N2X, 4N3X, H11AX series contains an infrared emitting diode optically coupled to a phototransistor. It is packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option.
Key Features
- High isolation voltage between input and output (Viso=5000 V rms)
- Creepage distance >7.6mm
- Operating temperature up to +110°C
- pact dual-in-line package
- Pb free and RoHS compliant
- UL approved (No. E214129)
- VDE approved (No
- SEMKO approval pending
- NEMKO approval pending
- DEMKO approval pending
