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ITR8307 - Phototransistor

Description

The ITR8307 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing The phototransistor receives radiation from the IR only .This is the normal situation.

Features

  • ․Thin ․Fast response time ․High sensitivity ․Pb free ․High analytic ․Compact.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ITR8307 Features ․Thin ․Fast response time ․High sensitivity ․Pb free ․High analytic ․Compact Description The ITR8307 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing The phototransistor receives radiation from the IR only .This is the normal situation. But when an object is in between, phototransistor could not receive the radiation. Applications ․Various microcomputer control equipment ․Floppy disk driver ․Cassette type recorder ․Camera ․VCR Revi1sion Copy:rig6ht © 2010, Everlight All Rights Reserved. Release Date : June.11.2013. Issue RNoe:DleRaX-s0e00D01a08te:R2e0v.163-06-1w3w1w6.:e2v0e:r1li7g.h0t.
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