Download the EL816X-G datasheet PDF.
This datasheet also covers the EL816A-G variant, as both devices belong to the same 4pin dip phototransistor photocoupler family and are provided as variant models within a single manufacturer datasheet.
Description
The EL816(D)-G series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector encapsulated with green compound.
Features
- Compliance Halogens Free
(Br < 900 ppm, Cl < 900 ppm, Br+Cl < 1500 ppm).
- Current transfer ratio
(CTR: 50~600% at IF = 5mA, VCE = 5V)
(CTR: 63~125% at IF = 10mA, VCE = 5V)
(CTR: 10~265% at IF = 0.5mA, VCE = 5V).
- High isolation voltage between input
and output (Viso = 5000 V rms ).
- Compact small outline package.
- Compliance with EU REACH.
- The product itself will remain within RoHS compliant version.
- UL and cUL approved (No. E214129).