EL2501-G phototransistor equivalent, 4 pin dip phototransistor.
* Halogens free.
* Current transfer ratio (CTR: 80~600% at I F =5mA, V CE =5V)
* High isolation voltage between input and output (Viso=5000 V rms )
* Cre.
* Programmable controllers
* System appliances, measuring instruments
* Telecommunication equipments
* H.
The EL2501-G series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector encapsulated with green compound.. They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option..
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