FLL200IB-2 datasheet, fet equivalent, Eudyna Devices

FLL200IB-2 fet equivalent, (fll200ib-1/-2/-3) l-band medium & high power gaas fet.

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Features and benefits

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* High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: ηadd = 34% (Typ.) Proven Reliability .

Application

Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXI.

Description

The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments f.

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