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FLL120MK - L-Band Medium & High Power GaAs FET

General Description

The FLL120MK is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices.

The performance in multitone environments for Class AB operation make them ideally suited for base station applications.

Key Features

  • High Output Power: P1dB = 40.0dBm (Typ. ).
  • High Gain: G1dB = 10.0dB (Typ. ).
  • High PAE: ηadd = 40% (Typ. ).
  • Proven Reliability.
  • Hermetically Sealed Package FLL120MK L-Band Medium & High Power GaAs FET.

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Datasheet Details

Part number FLL120MK
Manufacturer Eudyna Devices
File Size 127.86 KB
Description L-Band Medium & High Power GaAs FET
Datasheet download datasheet FLL120MK Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FEATURES • High Output Power: P1dB = 40.0dBm (Typ.) • High Gain: G1dB = 10.0dB (Typ.) • High PAE: ηadd = 40% (Typ.) • Proven Reliability • Hermetically Sealed Package FLL120MK L-Band Medium & High Power GaAs FET DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance.