Datasheet4U Logo Datasheet4U.com

FLK207MH-14 - Ku Band Power GaAs FET

Description

The FLK207MH-14 is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency.

Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

Features

  • www. DataSheet4U. com High Output Power: P1dB = 32.5dBm(Typ. ).
  • High Gain: G1dB = 6.0dB(Typ. ).
  • High PAE: ηadd = 27%(Typ. ).
  • Proven Reliability.
  • Hermetic Metal/Ceramic Package.

📥 Download Datasheet

Datasheet Details

Part number FLK207MH-14
Manufacturer Eudyna Devices
File Size 124.10 KB
Description Ku Band Power GaAs FET
Datasheet download datasheet FLK207MH-14 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Eudyna Devices

Part Number Description
FLK207XV GaAs FET & HEMT Chips
FLK017WF Ku Band Power GaAs FET
FLK017XP GaAs FET & HEMT Chips
FLK027WG Ku Band Power GaAs FET
FLK027XP GaAs FET & HEMT Chips

Full PDF Text Transcription

Click to expand full text
FLK207MH-14 X, Ku Band Power GaAs FET FEATURES •www.DataSheet4U.com High Output Power: P1dB = 32.5dBm(Typ.) • High Gain: G1dB = 6.0dB(Typ.) • High PAE: ηadd = 27%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLK207MH-14 is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 12.
Published: |