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ESIC06065S Datasheet Preview

ESIC06065S Datasheet

Silicon Carbide Power Schottky Barrier Diode

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ESIC06065S
Silicon Carbide Power Schottky
Barrier Diode
TO-220AC
Features
Rated to 650V at 6 Amps
Zero reverse recovery current
Zero forward recovery voltage
Temperature independent switching behaviour
High temperature operation
High frequency operation
Marking : ESIC06065S
Benefits
Unipolar rectifier
Substantially reduced switching losses
No thermal run-away with parallel devices
Reduced heat sink requirements
Ordering Information
Part No.
Package
ESIC06065S
TO-220AC
Packing
50 / Tube
Application
SMPS, e.g., CCM PFC
Motor drives, Solar application, UPS,
Wind turbine, Rail traction, EV/HEV
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
Symbol
Repetitive Peak Reverse Voltage
VRRM
Surge Peak Reverse Voltage
VRSM
DC Blocking Voltage
VDC
Continuous Forward Current
IF
Repetitive Peak Forward Surge Current
IFRM
Tj=25
Tj=25
Tj=25
Tj=25
Tj=135
Tj=152
Conditions
TC=25 , tp=10ms, Half Sine Wave,
D=0.3
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
Typical Thermal Resistance from
Junction to Case
IFSM
PTOT
TjTstg
RθJC
TC=25 , tp=10ms, Half Sine Wave
TC=25
TC=110
Limit
650
650
650
21.5
10
6
30
42
85.8
39
-55~+175
1.748
Unit
V
V
V
A
A
A
W
W
oC
oC/W
Revision: B06
DC-00056
1/4
www.eris.com.tw




Eris

ESIC06065S Datasheet Preview

ESIC06065S Datasheet

Silicon Carbide Power Schottky Barrier Diode

No Preview Available !

ESIC06065S
Electrical Characteristics ( TA = 25 °C unless otherwise specified )
Parameter
Conditions
Forward Voltage
IF=6A, Tj=25
IF=6A, Tj=175
Reverse Current
VR=650V, Tj=25
VR=650V, Tj=175
Total Capacitive Charge
VR=400V, Tj=150
Qc =
C(V) dV
Total Capacitive Charge
VR=0V, Tj=25, f=1MHZ
VR=200V, Tj=25, f=1MHZ
VR=400V, Tj=25, f=1MHZ
Silicon Carbide Power Schottky
Barrier Diode
Symbol
VF
IR
QC
C
Min.
-
-
-
-
Typ.
1.44
1.73
10
15
Max.
1.8
2.5
100
200
Unit
V
μA
- 23 - nC
- 424 434
- 44 45 pF
- 42.5 43
Rating and Characteristics Curves
VF (V)
VR (V)
Revision: B06
DC-00056
2/4
VR (V)
www.eris.com.tw


Part Number ESIC06065S
Description Silicon Carbide Power Schottky Barrier Diode
Maker Eris
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