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Eris

BAV99W Datasheet Preview

BAV99W Datasheet

Surface Mount Switching Diode

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BAV99W
Dual Series Chips
Surface Mount Switching Diode
FEATURES
‧Fast Switching Speed
‧Surface Mount Package Ideally Suited for Automatic Insertion
‧For General Purpose Switching Applications
‧High Conductance
Marking
BAV99W = A7, KJG
Maximum Ratings (TA=25°C unless otherwise specified)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Thermal Characteristics (TA=25°C unless otherwise specified)
Characteristic
Total Device Dissipation
FR–5 Board (Note 1.)
TA = 25°C
Derate above 25°C
Thermal Resistance from Junction to Ambient
Total Device Dissipation
Alumina Substrate (Note 2.)
TA = 25°C
Derate above 25°C
Thermal Resistance from Junction to Ambient
Operating/ Junction and Storage Temperature Range
Symbol
VR
IF
IFM(surge)
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
70
215
500
Max
200
1.6
625
300
2.4
417
-65~+150
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Revision: B01
www.eris.com.tw




Eris

BAV99W Datasheet Preview

BAV99W Datasheet

Surface Mount Switching Diode

No Preview Available !

BAV99W
Dual Series Chips
Surface Mount Switching Diode
Electrical Characteristics (TA=25°C unless otherwise specified)
Characteristic
Symbol
OFF Characteristics
Reverse Breakdown Voltage
(IBR = 100 μAdc)
Reverse Voltage Leakage Current
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc)
(VR = 70 Vdc, TJ = 150°C)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) RL = 100
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V(BR)
IR
CT
VF
trr
Min.
70
Max.
30
2.5
50
1.5
715
855
1000
1250
6
Unit
Vdc
μAdc
pF
mVdc
ns
Revision: B01
www.eris.com.tw


Part Number BAV99W
Description Surface Mount Switching Diode
Maker Eris
Total Page 3 Pages
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