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PTF102015 - Field Effect Transistor

Description

Efficiency (%)x Adjacent Channel Power Ratio (dB) The PTF 102015 is a 30

watt GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz.

This LDMOS device operates at 47% efficiency with 13 dB gain.

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Datasheet Details

Part number PTF102015
Manufacturer Ericsson
File Size 115.06 KB
Description Field Effect Transistor
Datasheet download datasheet PTF102015 Datasheet

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Full PDF Text Transcription

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PRELIMINARY PTF 102015* GOLDMOS® Field Effect Transistor 30 Watts, 2110-2170 MHz Description Efficiency (%)x Adjacent Channel Power Ratio (dB) The PTF 102015 is a 30–watt GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This LDMOS device operates at 47% efficiency with 13 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. WCDMA Performance 20 VDS = 28 V 16 IDQ = 320 mA fC = 2170 12 Ef f icienc y 8 ACPR1 (FC + 5 MHz) 4 -20 -35 -50 0 ACPR2 (FC + 10 MHz) -65 0 0.5 1 1.5 2 2.5 3 3.5 4 • Typical WCDMA Performance - Average Output Power = 3.2 Watts - Gain = 14 dB - Efficiency = 17 % (Channel Bandwidth 4.
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