PTF102015 transistor equivalent, field effect transistor.
from 2110 to 2170 MHz. This LDMOS device operates at 47% efficiency with 13 dB gain. Nitride surface passivation and ful.
Efficiency (%)x Adjacent Channel Power Ratio (dB)
The PTF 102015 is a 30
–watt GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This LDMOS device operates at 47% efficiency with 13 dB gain. Nitride surface passivati.
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