PTF10122 - 50 Watts WCDMA/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor

Datasheet Summary

Description

The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz.

It is rated at 50 watts power output, with 11 dB of gain.

Ericsson

📥 Download Datasheet

Datasheet Details

Part number	PTF10122
Manufacturer	Ericsson
File Size	263.23 KB
Description	50 Watts WCDMA/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor
Datasheet	PTF10122 Datasheet
Additional preview pages of the PTF10122 datasheet.

📁 Similar Datasheet

PTF102003 - PUSH/PULL LATERAL MOSFET (PEAK)
PTF11A - Relay (Omron)
PTF13005 - NPN Silicon Power Transistor (Wing On)
PTF14A-E - Relay (Omron)
PTF180101 - LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz (Infineon Technologies AG)
PTF180101S - LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz (Infineon Technologies AG)
PTF180601 - LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz (Infineon Technologies AG)
PTF180601C - LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz (Infineon Technologies AG)
PTF180601E - LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz (Infineon Technologies AG)
PTF180901E - GSM/EDGE RF Power FET (Infineon Technologies AG)

Other Datasheets by Ericsson

PTF10120 - 120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor
PTF10125 - 135 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor
PTF10100 - 165 Watts/ 860-900 MHz LDMOS Field Effect Transistor
PTF10107 - 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor
PTF10111 - 6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor
PTF10112 - 60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor
PTF10119 - 12 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor
PTF10133 - 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor

Full PDF Text Transcription

Click to expand full text

PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • • • • • • • INTERNALLY MATCHED Guaranteed Performance at 2.17 GHz, 28 V - Output Power = 50 Watts Min - Gain = 11.0 dB Typ - Efficiency = 35% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs.

Published: Apr 16, 2005 |