Datasheet Details
| Part number | PTF10122 |
|---|---|
| Manufacturer | Ericsson |
| File Size | 263.23 KB |
| Description | 50 Watts WCDMA/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| Datasheet |
 PTF10122 Datasheet
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| Part number | PTF10122 |
|---|---|
| Manufacturer | Ericsson |
| File Size | 263.23 KB |
| Description | 50 Watts WCDMA/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| Datasheet |
PTF10122 Datasheet
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The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz.
It is rated at 50 watts power output, with 11 dB of gain.
Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS™ Field Effect Transistor.
| Part Number | Description |
|---|---|
| PTF10120 | 120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10125 | 135 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor |
| PTF10100 | 165 Watts/ 860-900 MHz LDMOS Field Effect Transistor |
| PTF10107 | 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10111 | 6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor |
| PTF10112 | 60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10119 | 12 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10133 | 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10134 | 100 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10135 | 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor |