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Ericsson

PTB20079 Datasheet Preview

PTB20079 Datasheet

10 Watts/ 1.6-1.7 GHz INMARSAT RF Power Transistor

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PTB 20079
10 Watts, 1.6–1.7 GHz
INMARSAT RF Power Transistor
Description
The 20079 is a class A/AB, NPN, silicon bipolar junction, internally-
matched, common emitter RF Power transistor intended for 26 Vdc
operation across 1.6 to 1.7 GHz frequency band. It is rated at 10
Watts minimum output power for PEP applications. Ion implantation,
nitride surface passivation and gold metallization ensure excellent
device reliability. 100% lot traceability is standard.
• 10 Watts, 1.6–1.7 GHz
• Class A/AB Characteristics
• 38% Collector Efficiency at 10 Watts
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
16
+24V
14
+26V
12
+22V
10
8
6
4 f = 1.65 GHz
2 ICQ = 100 mA
0
0.00
0.50
1.00
1.50
Input Power (Watts)
2.00
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25° C
Above 25° C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70° C)
20079LOT CODE
Package 20209
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
50
50
4.0
1.4
52
0.29
–40 to +150
3.4
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
9/28/98
1




Ericsson

PTB20079 Datasheet Preview

PTB20079 Datasheet

10 Watts/ 1.6-1.7 GHz INMARSAT RF Power Transistor

No Preview Available !

PTB 20079
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
IC = 15 mA, RBE = 22
IE = 10 mA
IC = 1 A, VCE = 5 V
Symbol
V(BR)CER
V(BR)EBO
hFE
Min
55
4.0
20
RF Specifications (100% Tested)
Characteristic
Power Gain, Common-Emitter
(VCC = 26 Vdc, POUT = 3 W, ICQ = 120 mA, f = 1.65 GHz)
Efficiency
(VCC = 26 Vdc, POUT = 10 W, ICQ = 120 mA, f = 1.65 GHz)
Power Output at 1 dB Compression
(VCC = 26 Vdc, ICQ = 120 mA, f = 1.65 GHz)
Symbol Min
Gpe 10.5
ηC 37
P-1dB 10.0
Impedance Data (data shown for fixed-tuned broadband circuit)
VCC = 26 Vdc, POUT = 10 W, ICQ = 120 mA
Z Source
Z Load
e
Typ
Max
100
Units
Vdc
Vdc
Typ Max Units
11 —
dB
40 —
%
12 — Watts
Frequency
GHz
1.6
1.65
1.7
Z Source
R jX
3.9 -4.7
3.1 -3.8
2.3 -3.7
Z Load
R jX
6.1 -0.7
6.1 0.0
6.1 0.7
Z0 = 50
5/6/98
2


Part Number PTB20079
Description 10 Watts/ 1.6-1.7 GHz INMARSAT RF Power Transistor
Maker Ericsson
PDF Download

PTB20079 Datasheet PDF






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