The 20079 is a class A/AB, NPN, silicon bipolar junction, internallymatched, common emitter RF Power transistor intended for 26 Vdc operation across 1.6 to 1.7 GHz frequency band.
It is rated at 10 Watts minimum output power for PEP applications.
| Part number | PTB20079 |
|---|---|
| Manufacturer | Ericsson |
| File Size | 184.58 KB |
| Description | 10 Watts/ 1.6-1.7 GHz INMARSAT RF Power Transistor |
| Datasheet |
 PTB20079 Datasheet
|
|
|
| Part Number | Description | Manufacturer |
|---|---|---|
| PTB23001X | NPN microwave power transistors | NXP |
| PTB23002U | NPN microwave power transistor | NXP |
| PTB23003X | NPN microwave power transistor | NXP |
| PTB23003X | NPN microwave power transistors | NXP |
| PTB23005X | NPN microwave power transistors | NXP |
| Part Number | Description |
|---|---|
| PTB20074 | 14 watts/ 1.477-1.501 GHz Cellular Radio RF Power Transistor |
| PTB20077 | 0.7 Watts/ 1525-1660 MHz INMARSAT RF Power Transistor |
| PTB20078 | 2.5 Watts/ 1525-1660 MHz INMARSAT RF Power Transistor |
| PTB20003 | 4 Watts/ 915-960 MHz Cellular Radio RF Power Transistor |
| PTB20004 | 50 Watts/ 860-900 MHz Cellular Radio RF Power Transistor |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
