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PTB20079 10 Watts/ 1.6-1.7 GHz INMARSAT RF Power Transistor

PTB20079 Description

e PTB 20079 10 Watts, 1.6 *1.7 GHz INMARSAT RF Power Transistor .
The 20079 is a class A/AB, NPN, silicon bipolar junction, internallymatched, common emitter RF Power transistor intended for 26 Vdc operation across 1.

PTB20079 Applications

* Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. • • • • • 10 Watts, 1.6
* 1.7 GHz Class A/AB Characteristics 38% Collector Efficiency at 10 Watts Gold Metallization Silicon Nitride Passivated Typic

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Datasheet Details

Part number
PTB20079
Manufacturer
Ericsson
File Size
184.58 KB
Datasheet
PTB20079_Ericsson.pdf
Description
10 Watts/ 1.6-1.7 GHz INMARSAT RF Power Transistor

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Watts 1.6-1.7 GHz INMARSAT Power Transistor Ericsson
Ericsson PTB20079-like datasheet