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Ericsson

PTB20038 Datasheet Preview

PTB20038 Datasheet

25 Watts/ 860-900 MHz Cellular Radio RF Power Transistor

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PTB 20038
25 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
Description
The 20038 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 860 to 900 MHz frequency
band. Rated at 25 watts minimum output power, it may be used for
both CW and PEP applications. It is specifically designed for high
efficiency operation at average power levels around 10 watts with
high PEP capacity. Ion implantation, nitride surface passivation and
gold metallization are used to ensure excellent device reliability. 100%
lot traceability is standard.
Typical Output Power vs. Input Power
40
35
30
25
20
15 VCC = 25 V
10 ICQ = 100 mA
5 f = 900 MHz
0
0 12 34
Input Power (Watts)
5
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
• 25 Watts, 860–900 MHz
• Class AB Characteristics
• Gold Metallization
• Silicon Nitride Passivated
20038LOT CODE
Package 20200
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
40
50
4.0
6.7
65
0.37
–40 to +150
2.7
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
9/28/98
1




Ericsson

PTB20038 Datasheet Preview

PTB20038 Datasheet

25 Watts/ 860-900 MHz Cellular Radio RF Power Transistor

No Preview Available !

PTB 20038
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
IB = 0 A, IC = 100 mA
VBE = 0 V, IC = 100 mA
IC = 0 A, IE = 5 mA
VCE = 5 V, IC = 1 A
e
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
hFE
Min
25
55
3.5
20
Typ
30
70
5
50
Max
100
Units
Volts
Volts
Volts
RF Specifications (100% Tested)
Characteristic
Gain
(VCC = 25 Vdc, Pout = 25 W, ICQ = 100 mA, f = 900 MHz)
Collector Efficiency
(VCC = 25 Vdc, Pout = 25 W, ICQ = 100 mA, f = 900 MHz)
Gain
(VCC = 25 Vdc, Pout = 10 W, ICQ = 100 mA, f = 900 MHz)
Collector Efficiency
(VCC = 25 Vdc, Pout = 10 W, ICQ = 100 mA, f = 900 MHz)
Load Mismatch Tolerance
(VCC = 25 Vdc, Pout = 10 W, ICQ = 100 mA,
f = 900 MHz—all phase angles at frequency of test)
Symbol Min
Gpe 9.0
ηC 50
Gpe 10
ηC 35
Ψ
Typ Max Units
10.0 —
——
dB
%
11 —
dB
——
%
— 30:1
Typical Performance
80
70
60
50
40
30
20
10
0
840
Efficiency vs. Frequency
(as measeured in a broadband circuit)
Pout = 25 W
Pout = 10 W
VCC = 25 V
ICQ = 100m A
Circuit Tuned for
25 W Load Line
855 870 885 900 915
Frequency (MHz)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
2
Specifications subject to change without notice.
LF
© Ericsson Components AB 1994
EUS/KR 1301-PTB 20038 Uen Rev. D 09-28-98


Part Number PTB20038
Description 25 Watts/ 860-900 MHz Cellular Radio RF Power Transistor
Maker Ericsson
PDF Download

PTB20038 Datasheet PDF






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