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Ericsson

PTB20031 Datasheet Preview

PTB20031 Datasheet

40 Watts/ 420-470 MHz RF Power Transistor

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PTB 20031
40 Watts, 420–470 MHz
RF Power Transistor
Description
The 20031 is a class AB, NPN, common emitter RF power transistor
intended for 24 Vdc operation from 420 to 470 MHz. It is rated at 40
watts minimum output power, and may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power vs. Input Power
60
50
40
30
20
10
0
0
VCC = 24 V
ICQ = 200 mA
f = 470 MHz
246
Input Power (Watts)
8
10
• 40 Watts, 420–470 MHz
• Class AB Characteristics
• 50% Collector Efficiency at 40 Watts
• Gold Metallization
• Silicon Nitride Passivated
20031LOT CODE
Package 20200
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
40
50
4.0
10.0
175
1.0
–40 to +150
1.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
9/23/98
1




Ericsson

PTB20031 Datasheet Preview

PTB20031 Datasheet

40 Watts/ 420-470 MHz RF Power Transistor

No Preview Available !

PTB 20031
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
IB = 0 A, IC = 100 mA
VBE = 0 V, IC = 100 mA
IC = 0 A, IE = 5 mA
VCE = 5 V, IC = 1 A
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
hFE
Min
25
50
3.5
20
RF Specifications (100% Tested)
Characteristic
Symbol
Gain
(VCC = 24 Vdc, Pout = 40 W, ICQ = 200 mA, f = 420–470 MHz)
Collector Efficiency
(VCC = 24 Vdc, Pout = 40 W, ICQ = 200 mA, f = 420–470 MHz)
Intermodulation Distortion
(VCC = 24 Vdc, Pout = 40 W(PEP), ICQ = 200 mA, f1 = 469 MHz,
f2 = 470 MHz)
Load Mismatch Tolerance
(VCC = 24 Vdc, Pout = 40 W, ICQ = 200 mA, f = 420–470 MHz
—all phase angles at frequency of test)
Gpe
ηC
IMD
Ψ
Min
8.0
50
Typical Performance
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
12 80
11
10
9
8
7
6
410
Efficiency (%)
Gain (dB)
VCC = 24 V
ICQ = 200 mA
Pout = 30 W
70
60
50
40
30
420 430 440 450 460
Frequency (MHz)
20
470
e
Typ
30
70
5
50
Max
120
Units
Volts
Volts
Volts
Typ Max Units
9.5 —
——
dB
%
-22 — dBc
— 5:1
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
9/23/98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
2
Specifications subject to change
without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20031 Uen Rev. D 09-23-98


Part Number PTB20031
Description 40 Watts/ 420-470 MHz RF Power Transistor
Maker Ericsson
PDF Download

PTB20031 Datasheet PDF






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