The 20006 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band.
Rated at 4 watts minimum output power, it may be used for both CW and PEP applications.
| Part number | PTB20006 |
|---|---|
| Manufacturer | Ericsson |
| File Size | 44.98 KB |
| Description | 4 Watts/ 860-900 MHz Cellular Radio RF Power Transistor |
| Datasheet |
 PTB20006 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| PTB23001X | NPN microwave power transistors | NXP |
| PTB23002U | NPN microwave power transistor | NXP |
| PTB23003X | NPN microwave power transistor | NXP |
| PTB23003X | NPN microwave power transistors | NXP |
| PTB23005X | NPN microwave power transistors | NXP |
| Part Number | Description |
|---|---|
| PTB20003 | 4 Watts/ 915-960 MHz Cellular Radio RF Power Transistor |
| PTB20004 | 50 Watts/ 860-900 MHz Cellular Radio RF Power Transistor |
| PTB20005 | 15 Watts/ 860-900 MHz Cellular Radio RF Power Transistor |
| PTB20007 | 30 Watts/ 935-960 MHz Cellular Radio RF Power Transistor |
| PTB20008 | 10 Watts/ 935-960 MHz Cellular Radio RF Power Transistor |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
