SLA9000F array equivalent, high integration gate array.
q Super-high density (adopting 1.0µm silicon gate CMOS with 2-metal layer) q High-speed operation (operation delay of internal gate = 0.3ns at 5.0V, 2-input Power NAND st.
Simplified level shifter cell is available on this series. And, the µA order low noise output cell of the series has ma.
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