EN71SN10F
EN71SN10F is 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip manufactured by Elite Semiconductor Microelectronics Technology.
EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package
Features
- Multi-Chip Package
- NAND Flash Density: 1-Gbits
- Mobile DDR SDRAM Density: 512-Mbit
- Device Packaging
- 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm
- Operating Voltage
- NAND : 1.7V to 1.95V
- Mobile DDR SDRAM : 1.7V to 1.95V
- Operating Temperature :-25 °C to +85 °C
NAND FLASH
- Voltage Supply: 1.8V (1.7V ~ 1.95V )
- Organization
- Memory Cell Array : (128M + 4M) x 8bit for 1Gb
- Multiplexed address/ data
- Data Register : (2K + 64) x 8bit
- Automatic Program and Erase
- Page Program : (2K + 64) bytes
- Block Erase : (128K + 4K) bytes
- Page Read Operation
- Page Size : (2K + 64) bytes
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