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EN71SN10F - 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip

Key Features

  • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit.
  • Device Packaging - 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm.
  • Operating Voltage - NAND : 1.7V to 1.95V - Mobile DDR SDRAM : 1.7V to 1.95V.
  • Operating Temperature :-25 °C to +85 °C NAND FLASH.
  • Voltage Supply: 1.8V (1.7V ~ 1.95V ).
  • Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Multiplexed address/ data - Data Register : (2K + 64) x 8.

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Datasheet Details

Part number EN71SN10F
Manufacturer Eon Silicon Solution
File Size 4.04 MB
Description 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip
Datasheet download datasheet EN71SN10F Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm • Operating Voltage - NAND : 1.7V to 1.95V - Mobile DDR SDRAM : 1.7V to 1.95V • Operating Temperature :-25 °C to +85 °C NAND FLASH • Voltage Supply: 1.8V (1.7V ~ 1.95V ) • Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Multiplexed address/ data - Data Register : (2K + 64) x 8bit • Automatic Program and Erase - Page Program : (2K + 64) bytes - Block Erase : (128K + 4K) bytes • Page Read Operation - Page Size : (2K + 64) bytes - Random Read : 25µs (Max.) - Serial Access : 45ns (Min.