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EM620FU8B - 256K x8 bit Low Power and Low Voltage Full CMOS Static RAM

General Description

Name CS1,CS2 OE WE A0~A17 I/O0~I/O7 Function Chip select inputs Output Enable input Write Enable input Address Inputs Data Inputs/Outputs Name Vcc Vss NC Function Power Supply x Pre-charge Circuit Row Select Ground No Connection A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 VCC VSS Memory Array 1024 x 2048

Key Features

  • - Process Technology : 0.15µm Full CMOS - Organization :256K x8 - Power Supply Voltage => EM620FU8B : 2.7~3.3V - Low Data Retention Voltage : 1.5V - Three state output and TTL Compatible - Packaged product designed for 45/55/70ns.

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Datasheet Details

Part number EM620FU8B
Manufacturer Emerging Memory & Logic Solutions
File Size 421.11 KB
Description 256K x8 bit Low Power and Low Voltage Full CMOS Static RAM
Datasheet download datasheet EM620FU8B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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EM620FU8B Document Title 256K x8 bit Low Power and Low Voltage Full CMOS Static RAM Low Power, 256Kx8 SRAM www.DataSheet4U.com Revision History Revision No. 0.0 0.1 History Initial Draft 0.1 Revision Fix typo error Draft Date Oct. 31, 2007 Nov. 16, 2007 Remark 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com Emerging Memory & Logic Solutions Inc. Zip Code : 690-719 The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your questions about device. If you have any questions, please contact the EMLSI office.