EM620FU8B Overview
CS1 H X L L L CS2 X L H H H OE X X H L X WE X X H H L I/O0-7 High-Z High-Z High-Z Data Out Data In Mode Deselected Deselected Output Disabled Read Write Power Stand by Stand by Active Active Active Note: (Must be low or high state) 3 EM620FU8B REMEN.
EM620FU8B Key Features
- Process Technology : 0.15µm Full CMOS
- Organization :256K x8
- Power Supply Voltage => EM620FU8B : 2.7~3.3V
- Low Data Retention Voltage : 1.5V
- Three state output and TTL patible
- Packaged product designed for 45/55/70ns GENERAL PHYSICAL SPECIFICATIONS
- Backside die surface of polished bare silicon
- Typical Die Thickness = 725um +/-15um
- Typical top-level metallization : => Metal (Ti/AlCu/TiN/ARC SiON/SiO2) : 5.2K Angstroms
- Topside Passivation : => Passivation (HDP/pNIT/PIQ) : 5.4K Angstroms