EDS2532EGBH-TT - 256M bits SDRAM WTR

Features

• ×32 organization.
• Single pulsed /RAS.
• Burst read/write operation and burst read/single write operation capability.
• Byte control by DQM.
• Wide temperature range  TA =.
• 20°C to +85°C A0 to A11 BA0, BA1 DQ0 to DQ31 /CS /RAS /CAS /WE DQM0 to DQM3 CKE CLK VDD VSS VDDQ VSSQ NC (Top view) Address inputs Bank select address Data-input/output Chip select Row address strobe Column address strobe Write enable DQ mask enable Clock enable Clock input Pow.