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EDS2532EEBH-9A - 256M bits SDRAM

Description

The EDS2532EEBH is a 256M bits SDRAM organized as 2,097,152 words × 32 bits × 4 banks.

All inputs and outputs are synchronized with the positive edge of the clock.

It is packaged in 90-ball FBGA.

Features

  • 1.8V power supply Clock frequency: 111MHz (max. ) LVCMOS interface Single pulsed /RAS ×32 organization 4 banks can operate simultaneously and independently.
  • Burst read/write operation and burst read/single write operation capability.
  • Programmable burst length (BL): 1, 2, 4, 8 and full page.
  • 2 variations of burst sequence  Sequential (BL = 1, 2, 4, 8, full page)  Interleave (BL = 1, 2, 4, 8).
  • Programm.

📥 Download Datasheet

Datasheet Details

Part number EDS2532EEBH-9A
Manufacturer Elpida Memory
File Size 764.48 KB
Description 256M bits SDRAM
Datasheet download datasheet EDS2532EEBH-9A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PRELIMINARY DATA SHEET 256M bits SDRAM EDS2532EEBH-9A (8M words × 32 bits) Description The EDS2532EEBH is a 256M bits SDRAM organized as 2,097,152 words × 32 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the clock. It is packaged in 90-ball FBGA. Pin Configurations /xxx indicate active low signal. 90-ball FBGA 1 2 3 4 5 6 7 8 9 A DQ26 DQ24 VSS VDD DQ23 DQ21 VDDQ VSSQ DQ19 DQ22 DQ20 VDDQ DQ17 DQ18 VDDQ NC A2 A10 NC BA0 /CAS VDD DQ6 DQ1 Features • • • • • • 1.8V power supply Clock frequency: 111MHz (max.
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