The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
DATA SHEET
www.DataSheet4U.com
1GB Unbuffered DDR2 SDRAM DIMM
EBE10UE8AFFA (128M words × 64 bits, 1 Rank)
Specifications
• Density: 1GB • Organization ⎯ 128M words × 64 bits, 1 rank • Mounting 8 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory module (DIMM) ⎯ PCB height: 30.0mm ⎯ Lead pitch: 1.0mm ⎯ Lead-free (RoHS compliant) and Halogen-free • Power supply: VDD = 1.8V ± 0.1V • Data rate: 800Mbps/667Mbps (max.) • Eight internal banks for concurrent operation (components) • Interface: SSTL_18 • Burst lengths (BL): 4, 8 • /CAS Latency (CL): 3, 4, 5, 6 • Precharge: auto precharge option for each burst access • Refresh: auto-refresh, self-refresh • Refresh cycles: 8192 cycles/64ms ⎯ Average refresh period 7.8µs at 0°C ≤ TC ≤ +85°C 3.