EBE10UE8AFFA Datasheet | Elpida Memory

Features - Double-data-rate architecture; two data transfers per clock cycle - The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture - Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver - DQS is edge-aligned with data for READs; centeraligned with data for WRITEs - Differential clock inputs (CK and /CK) - DLL aligns DQ and DQS transitions with CK transitions - mands entered on each positive CK edge; data and data mask referenced to both edges of DQS - Data mask (DM) for write data - Posted /CAS by programmable additive latency for better mand and data bus efficiency - Off-Chip-Driver Impedance Adjustment and On-Die Termination for better signal quality - /DQS can be disabled for single-ended Data Strobe operation Document No. E1457E20 (Ver. 2.0) Date Published April 2009 (K) Japan Printed in Japan URL: http://.elpida. ©Elpida Memory, Inc. 2009 Ordering Information Data rate Mbps (max.) 800 667 ponent JEDEC speed bin (CL-t RCD-t RP) DDR2-800 (6-6-6) DDR2-667 (5-5-5) Contact pad Gold .. Part number EBE10UE8AFFA-8G-F EBE10UE8AFFA-6E-F Package 240-pin DIMM (lead-free and halogen-free) Mounted devices EDE1108AFSE-8E-F EDE1108AFSE-8E-F EDE1108AFSE-6E-F Pin Configurations Front side 1 pin 64 pin 65 pin 120 pin 121 pin Back side 184 pin 185 pin 240 pin Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Pin name VREF VSS DQ0 DQ1 VSS /DQS0 DQS0 VSS DQ2 DQ3 VSS DQ8 DQ9 VSS /DQS1 DQS1 VSS NC NC VSS DQ10 DQ11 VSS DQ16 DQ17 VSS /DQS2 DQS2 Pin No. 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 Pin name A4 VDD A2 VDD VSS VSS VDD NC VDD A10 BA0 VDD /WE /CAS VDD NC NC VDD VSS DQ32 DQ33 VSS /DQS4 DQS4 VSS DQ34 DQ35 VSS Pin No. 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 Pin name VSS DQ4 DQ5 VSS DM0 NC VSS DQ6 DQ7 VSS...