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EBE10UE8AEFA - 1GB Unbuffered DDR2 SDRAM DIMM

General Description

Pin name A0 to A13 A10 (AP) BA0, BA1, BA2 DQ0 to DQ63 /RAS /CAS /WE /CS0 CKE0 CK0 to CK2 /CK0 to /CK2 DQS0 to DQS7, /DQS0 to /DQS7 DM0 to DM7 SCL SDA SA0 to SA2 VDD VDDSPD VREF VSS ODT0 NC Function Address input Row address Column address Auto precharge Bank select address Data input/output Row addr

Key Features

  • Double-data-rate architecture; two data transfers per clock cycle.
  • The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture.
  • Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver.
  • DQS is edge-aligned with data for READs; centeraligned with data for WRITEs.
  • Differential clock inputs (CK and /CK).
  • DLL aligns DQ and DQS transitions with CK transi.

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Datasheet Details

Part number EBE10UE8AEFA
Manufacturer Elpida Memory
File Size 272.02 KB
Description 1GB Unbuffered DDR2 SDRAM DIMM
Datasheet download datasheet EBE10UE8AEFA Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.DataSheet4U.com 1GB Unbuffered DDR2 SDRAM DIMM EBE10UE8AEFA (128M words × 64 bits, 1 Rank) Specifications • Density: 1GB • Organization  128M words × 64 bits, 1 rank • Mounting 8 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory module (DIMM)  PCB height: 30.0mm  Lead pitch: 1.0mm  Lead-free (RoHS compliant) (EBE10UE8AEFA-xx-E)  Lead-free (RoHS compliant) and Halogen-free (EBE10UE8AEFA-xx-F) • Power supply: VDD = 1.8V ± 0.1V • Data rate: 800Mbps/667Mbps (max.