F59L4G81A
FEATURES
- Voltage Supply: 3.3V (2.7V ~ 3.6V)
- Organization
- Memory Cell Array: (512M + 16M) x 8bit
- Data Register: (2K + 64) x 8bit
- Automatic Program and Erase
- Page Program: (2K + 64) bytes
- Block Erase: (128K + 4K) bytes
- Page Read Operation
- Page Size: (2K + 64) bytes
- Random Read: 25us (Max.)
- Serial Access: 25ns (Min.)
- Memory Cell: 1bit/Memory Cell
- Fast Write Cycle Time
- Program time: 350us (Typ.)
- Block Erase time: 3.5ms (Typ.)
- mand/Address/Data Multiplexed I/O Port
- Hardware Data Protection
- Program/Erase Lockout During Power Transitions
4 Gbit (512M x 8) 3.3V NAND Flash Memory
- Reliable CMOS Floating Gate Technology
- ECC Requirement: 4bit/512Byte
- Endurance: 100K Program/Erase cycles
- Data Retention: 10 years
- mand Register Operation
- Automatic Page 0 Read at Power-Up Option
- Boot from NAND support
- Automatic Memory Download
- NOP: 4 cycles
- Cache Program Operation for High Performance Program
- Cache Read Operation
- Copy-Back...
