F59L4G81A - 4 Gbit (512M x 8) 3.3V NAND Flash Memory

Elite Semiconductor

Datasheet Details

The device is a 512Mx8bit with spare 16Mx8bit capacity..

Voltage Supply: 3.3V (2.7V ~ 3.6V).
Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit.
Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes.
Page Read Operation - Page Size: (2K + 64) bytes - Random Read: 25us (Max. ) - Serial Access: 25ns (Min. ).
Memory Cell: 1bit/Memory Cell.
Fast Write Cycle Time - Program time: 350us (Typ. ) - Block Erase time: 3.5ms (Typ. ).
Command/Address/Data Mu.

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F59L4G81A Stock/Price