F59L4G81A memory equivalent, 4 gbit (512m x 8) 3.3v nand flash memory.
* Voltage Supply: 3.3V (2.7V ~ 3.6V)
* Organization
- Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit
* Automatic Program and Erase -.
The device is a 512Mx8bit with spare 16Mx8bit capacity. The device is offered in 3.3V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be era.
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