• Part: F59L4G81A
  • Description: 4 Gbit (512M x 8) 3.3V NAND Flash Memory
  • Manufacturer: Elite Semiconductor Microelectronics Technology
  • Size: 1.52 MB
F59L4G81A Datasheet (PDF) Download
Elite Semiconductor Microelectronics Technology
F59L4G81A

Description

The device is a 512Mx8bit with spare 16Mx8bit capacity. The device is offered in 3.3V VCC Power Supply.

Key Features

  • Voltage Supply: 3.3V (2.7V ~ 3.6V)
  • Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit
  • Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes
  • Page Read Operation - Page Size: (2K + 64) bytes - Random Read: 25us (Max.) - Serial Access: 25ns (Min.)
  • Memory Cell: 1bit/Memory Cell
  • Fast Write Cycle Time - Program time: 350us (Typ.) - Block Erase time: 3.5ms (Typ.)
  • Command/Address/Data Multiplexed I/O Port
  • Hardware Data Protection - Program/Erase Lockout During Power Transitions