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A44 NPN Epitaxial Silicon Transistor
HIGH VOLTAGE AMPLIFIER
Collector-Emitter Voltage: VCEO=400V Collector Dissipation: PC(max)=625mW
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO 400 V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO 5 V
Collector Current
IC 200 mA
Collector Dissipation Junction Temperature Storage Temperature
PC TJ TSTG
625 150 -55~+150
mW oC oC
Electrical Characteristics (TA=25oC)
Characteristic
Symbol
Test Conditions
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage
BVCBO BVCEO
IC= 100µA, IE= 0 IC= 1mA, IB= 0
Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current
BVEBO ICBO ICEO IEBO
IE= 10µA, IC= 0 VCB= 30
A44 Datasheet
