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MEF64M16G750M3ND - 1024Mbit 3.3V - NAND Flash Memory Module

Download the MEF64M16G750M3ND datasheet PDF. This datasheet also covers the MEF64M16G150M3ND variant, as both devices belong to the same 1024mbit 3.3v - nand flash memory module family and are provided as variant models within a single manufacturer datasheet.

General Description

The MEF64M16ND is a 1024Megabit 3.3V NAND flash memory MCM, assembled in multilayered cofired ceramic package, designed for low noise and better ground bounce.

Key Features

  • q 3.3V±10% Supply/ Programming q Access Time: 50ns (Page Read) q Fast Page Write Cycle Time (200uSec ) q Package type: 66-Pin Ceramic PGA 1.385” SQ 66-Pin Ceramic PGA 1.080” SQ q 60mA typical erase/program current q 60mA active read current q Embedded Program/Erase Algorithms q Industrial & Military Screening q 100,000 Erase/Program Cycles Product.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MEF64M16G150M3ND-Elisra.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MEF64M16G750M3ND
Manufacturer Elisra
File Size 921.74 KB
Description 1024Mbit 3.3V - NAND Flash Memory Module
Datasheet download datasheet MEF64M16G750M3ND Datasheet

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Other Datasheets by Elisra

Part Number Description
MEF64M16G750I3ND 1024Mbit 3.3V - NAND Flash Memory Module
MEF64M16G150I3ND 1024Mbit 3.3V - NAND Flash Memory Module
MEF64M16G150M3ND 1024Mbit 3.3V - NAND Flash Memory Module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MEF64M16XX50X3ND 1024Mbit 3.3V – NAND Flash Memory Module 64MX16 3.3V NAND Flash Memory Module Features q 3.3V±10% Supply/ Programming q Access Time: 50ns (Page Read) q Fast Page Write Cycle Time (200uSec ) q Package type: 66-Pin Ceramic PGA 1.385” SQ 66-Pin Ceramic PGA 1.080” SQ q 60mA typical erase/program current q 60mA active read current q Embedded Program/Erase Algorithms q Industrial & Military Screening q 100,000 Erase/Program Cycles Product Description The MEF64M16ND is a 1024Megabit 3.3V NAND flash memory MCM, assembled in multilayered cofired ceramic package, designed for low noise and better ground bounce. Flowcharts of programming, byte write, block erase and other specifications are identical to “K9K1G08U0A" specifications and should be used as a reference.